AlGaN/GaN plasmonic terahertz electronic devices
نویسندگان
چکیده
منابع مشابه
AlGaN/GaN plasmonic terahertz electronic devices
A very large electron sheet density and a relatively long momentum relaxation time of the two-dimensional electron gas in III-N heterostructures makes this materials system to be very attractive for plasmonic electronics applications.
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2014
ISSN: 1742-6596
DOI: 10.1088/1742-6596/486/1/012025